FDMS8018 vs FDMS8050ET30 Comparison
This in-depth comparison of the FDMS8018 and FDMS8050ET30 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
TDFN-8
Description
MOSFET N-CH 30V 30A/120A 8PQFN
MOSFET N-CH 30V 55A/423A POWER56
Series
PowerTrench®
PowerTrench®
Part Status
Active
Not For New Designs
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
30 V
Current - Continuous Drain(Id) @ 25°C
-
55A (Ta), 423A (Tc)
Drive Voltage(Max Rds On Min Rds On)
-
4.5V, 10V
Rds On(Max) @ Id Vgs
-
0.65mOhm @ 55A, 10V
Vgs(th)(Max) @ Id
-
3V @ 750µA
Gate Charge(Qg)(Max) @ Vgs
-
285 nC @ 10 V
Vgs(Max)
-
±20V
Input Capacitance(Ciss)(Max) @ Vds
-
22610 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta), 83W (Tc)
3.3W (Ta), 180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Base Product Number
FDMS80
-
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 120A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
1.8mOhm @ 30A, 10V
-
Vgs(th) (Max) @ Id
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
5235 pF @ 15 V
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
