FDMS8018 vs FDMS86263P Comparison
This in-depth comparison of the FDMS8018 and FDMS86263P provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
TDFN-8
Description
MOSFET N-CH 30V 30A/120A 8PQFN
MOSFET P-CH 150V 4.4A/22A 8PQFN
Series
PowerTrench®
PowerTrench®
Part Status
Active
Active
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
150 V
Current - Continuous Drain(Id) @ 25°C
-
4.4A (Ta), 22A (Tc)
Drive Voltage(Max Rds On Min Rds On)
-
6V, 10V
Rds On(Max) @ Id Vgs
-
53mOhm @ 4.4A, 10V
Vgs(th)(Max) @ Id
-
4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
63 nC @ 10 V
Vgs(Max)
-
±25V
Input Capacitance(Ciss)(Max) @ Vds
-
3905 pF @ 75 V
Power Dissipation (Max)
2.5W (Ta), 83W (Tc)
2.5W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Base Product Number
FDMS80
-
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 120A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
1.8mOhm @ 30A, 10V
-
Vgs(th) (Max) @ Id
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
5235 pF @ 15 V
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
