FDS6930B vs FDS6900AS-G Comparison
This in-depth comparison of the FDS6930B and FDS6900AS-G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
SOIC-8
SOIC-8
Description
MOSFET 2N-CH 30V 5.5A 8SOIC
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
Supplier
onsemi,Rochester Electronics, LLC
Flip Electronics,onsemi
Series
PowerTrench®
PowerTrench®, SyncFET™
Part Status
Active
Obsolete
FET Type
2 N-Channel (Dual)
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
30V
Current - Continuous Drain(Id) @ 25°C
5.5A
6.9A, 8.2A
Rds On(Max) @ Id Vgs
38mOhm @ 5.5A, 10V
27mOhm @ 6.9A, 10V
Vgs(th)(Max) @ Id
3V @ 250µA
3V @ 250µA, 3V @ 1mA
Gate Charge(Qg)(Max) @ Vgs
3.8nC @ 5V
15nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds
412pF @ 15V
600pF @ 15V
Power - Max
900mW
900mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
