FDS6990A vs FDS6990AS
This in-depth comparison of the FDS6990AS and FDS6990A provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
SOIC-8
Description
MOSFET 2N-CH 30V 7.5A 8SOIC
MOSFET 2N-CH 30V 7.5A 8SOIC
Series
PowerTrench®, SyncFET™
PowerTrench®
Part Status
Obsolete
-
Technology
MOSFET (Metal Oxide)
-
Configuration
2 N-Channel (Dual)
-
FET Feature
Logic Level Gate
-
Drain to Source Voltage (Vdss)
30V
-
Current - Continuous Drain (Id) @ 25°C
7.5A
-
Rds On (Max) @ Id, Vgs
22mOhm @ 7.5A, 10V
-
Vgs(th) (Max) @ Id
3V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs
14nC @ 5V
-
Input Capacitance (Ciss) (Max) @ Vds
550pF @ 15V
-
Power - Max
900mW
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Base Product Number
FDS6990
-
Supplier
-
onsemi
ProductStatus
-
Obsolete
FETType
-
2 N-Channel (Dual)
FETFeature
-
Logic Level Gate
DraintoSourceVoltage(Vdss)
-
30V
Current-ContinuousDrain(Id)@25°C
-
7.5A
RdsOn(Max)@IdVgs
-
18mOhm @ 7.5A, 10V
Vgs(th)(Max)@Id
-
3V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
17nC @ 5V
InputCapacitance(Ciss)(Max)@Vds
-
1235pF @ 15V
Power-Max
-
900mW
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
