FDS8958B vs FDS8928A

This in-depth comparison of the FDS8958B and FDS8928A provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDS8958B

+BOM

2336 PCS | onsemi
FDS8928A

+BOM

8467 PCS | onsemi
Package SOIC-8
Description MOSFET N/P-CH 30V 6.4/4.5A 8SOIC POWER FIELD-EFFECT TRANSISTOR, 5
Supplier - Rochester Electronics, LLC
ProductStatus Active Active
Series PowerTrench® -
FETType N and P-Channel -
FETFeature Logic Level Gate -
DraintoSourceVoltage(Vdss) 30V -
Current-ContinuousDrain(Id)@25°C 6.4A, 4.5A -
RdsOn(Max)@IdVgs 26mOhm @ 6.4A, 10V -
Vgs(th)(Max)@Id 3V @ 250µA -
GateCharge(Qg)(Max)@Vgs 12nC @ 10V -
InputCapacitance(Ciss)(Max)@Vds 540pF @ 15V -
Power-Max 900mW -
OperatingTemperature -55°C ~ 150°C (TJ) -
MountingType Surface Mount -
Comparison Model : FDS8958B FDS8928A

+BOM RFQ