FDS8958B vs FDS8960C

This in-depth comparison of the FDS8958B and FDS8960C provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDS8958B

onsemi

Lifecycle
Active
Stock
2336 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
Part B

FDS8960C

onsemi

Lifecycle
Active
Stock
7963 PCS
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDS8958B FDS8960C
Supplier - Rochester Electronics, LLC
Part Status Active Active
Series PowerTrench® -
FET Type N and P-Channel -
FET Feature Logic Level Gate -
Drain to Source Voltage (Vdss) 30V -
Current - Continuous Drain(Id) @ 25°C 6.4A, 4.5A -
Rds On(Max) @ Id Vgs 26mOhm @ 6.4A, 10V -
Vgs(th)(Max) @ Id 3V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 12nC @ 10V -
Input Capacitance(Ciss)(Max) @ Vds 540pF @ 15V -
Power - Max 900mW -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -