GD25LE32DLIGR vs GD25LE64CLIGR

This in-depth comparison of the GD25LE32DLIGR and GD25LE64CLIGR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

GD25LE32DLIGR

GigaDevice Semiconductor (HK) Limited

Lifecycle
Active
Stock
1945 PCS
Series
Memory - Memory
+BOM RFQ
Part B

GD25LE64CLIGR

GigaDevice Semiconductor (HK) Limited

Lifecycle
Active
Stock
2679 PCS
Package
WLSCP-21
Series
Memory
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification GD25LE32DLIGR GD25LE64CLIGR
Part Status Active Active
Memory Type Non-Volatile Non-Volatile
Memory Format FLASH FLASH
Technology FLASH - NOR FLASH - NOR
Memory Size 32Mbit 64Mb (8M x 8)
Memory Interface SPI - Quad I/O SPI - Quad I/O
Clock Frequency 120 MHz 133 MHz
Write Cycle Time - Word Page - 2.4ms
Voltage - Supply 1.65V ~ 2V 1.65V ~ 2V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount
Base Product Number GD25LE32 -
Digi Key Programmable Not Verified -
Memory Organization 4M x 8 -
Write Cycle Time - Word, Page 2.4ms -
Packaging Tape & Reel (TR) -
Compare RFQ