IR2101PBF vs IR2103PBF

This in-depth comparison of the IR2101PBF and IR2103PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IR2101PBF

+BOM

5311 PCS | Infineon Technologies
IR2103PBF

+BOM

4177 PCS | Infineon Technologies
Package PDIP-8 PDIP-8
Description IC GATE DRVR HALF-BRIDGE 8DIP IC GATE DRVR HALF-BRIDGE 8DIP
ProductStatus Active Not For New Designs
DrivenConfiguration Half-Bridge Half-Bridge
ChannelType Independent Independent
NumberofDrivers 2 2
GateType IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V 10V ~ 20V
LogicVoltage-VILVIH 0.8V, 3V 0.8V, 3V
Current-PeakOutput(SourceSink) 210mA, 360mA 210mA, 360mA
InputType Non-Inverting Inverting, Non-Inverting
HighSideVoltage-Max(Bootstrap) 600 V 600 V
Rise/FallTime(Typ) 100ns, 50ns 100ns, 50ns
OperatingTemperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IR2101PBF IR2103PBF

+BOM RFQ