IR2109PBF vs IR2101PBF Comparison

This in-depth comparison of the IR2101PBF and IR2109PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IR2101PBF

+BOM

5311 PCS | Infineon Technologies
IR2109PBF

+BOM

2581 PCS | Infineon Technologies
Package PDIP-8 PDIP-8
Description IC GATE DRVR HALF-BRIDGE 8DIP IC GATE DRVR HALF-BRIDGE 8DIP
Part Status Active Not For New Designs
Driven Configuration Half-Bridge Half-Bridge
Channel Type Independent Synchronous
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VILVIH 0.8V, 3V 0.8V, 2.9V
Current - Peak Output(Source Sink) 210mA, 360mA 200mA, 350mA
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max(Bootstrap) 600 V 600 V
Rise / Fall Time(Typ) 100ns, 50ns 150ns, 50ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Comparison Model : IR2101PBF IR2109PBF

+BOM RFQ