IR21271STRPBF vs IR2127STRPBF

This in-depth comparison of the IR21271STRPBF and IR2127STRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IR21271STRPBF

Infineon Technologies

Lifecycle: Active
Stock: 7301 PCS
Package: SOIC 8N
Series: PMIC - Gate Drivers

+BOM RFQ

Part B

IR2127STRPBF

International Rectifier

Lifecycle: Active
Stock: 5968 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IR21271STRPBF	IR2127STRPBF
Part Status	Active	Active
Driven Configuration	High-Side or Low-Side	High-Side or Low-Side
Channel Type	Single	Single
Number of Drivers	1	1
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	9V ~ 20V	12V ~ 20V
Logic Voltage - VILVIH	0.8V, 3V	0.8V, 3V
Current - Peak Output(Source Sink)	250mA, 500mA	250mA, 500mA
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	600 V	600 V
Rise / Fall Time(Typ)	80ns, 40ns	80ns, 40ns
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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