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IR21271STRPBF
+BOMIC GATE DRVR HI/LOW SIDE 8SOIC
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ManufacturerInfineon Technologies
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Mfr. Part #IR21271STRPBF
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Datasheet IR21271STRPBF DataSheet
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Package SOIC 8N
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In Stock7301
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | High-Side or Low-Side |
| ChannelType | Single |
| NumberofDrivers | 1 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 9V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 3V |
| Current-PeakOutput(SourceSink) | 250mA, 500mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 80ns, 40ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
The IR21271STRPBF is an integrated power management IC designed by Infineon Technologies, commonly used in electronic applications requiring efficient power regulation and control. This device is part of the IR2127 series, known for its high-side and low-side gate driver capabilities, essential for driving N-channel power MOSFETs or IGBTs. It features undervoltage lockout, a high output current capability, and fast switching speeds, making it suitable for applications in motor control, power supplies, and DC-DC converters.
One of its key attributes is its ability to provide high-speed switching while protecting circuits from damage due to overvoltage or undervoltage conditions. The IR21271STRPBF is also known for its robustness, providing reliable performance in demanding environments. Its compact form factor and integration of multiple functions into a single chip help designers save space and reduce component count, which is crucial in modern electronic design. Overall, it is a versatile and efficient component for engineers looking to optimize power delivery in electronic systems.
One of its key attributes is its ability to provide high-speed switching while protecting circuits from damage due to overvoltage or undervoltage conditions. The IR21271STRPBF is also known for its robustness, providing reliable performance in demanding environments. Its compact form factor and integration of multiple functions into a single chip help designers save space and reduce component count, which is crucial in modern electronic design. Overall, it is a versatile and efficient component for engineers looking to optimize power delivery in electronic systems.
Equivalent
The IR21271STRPBF is a high-side driver. Equivalent products may include the FAN7382 from ON Semiconductor, the MIC4606 from Microchip Technology, and the MAX1614 from Maxim Integrated. Each of these drivers offers similar high-side driving capabilities, but it's important to check the specific electrical characteristics and pin configurations to ensure compatibility with your application. Always consult datasheets to confirm equivalency.
Features
The IR21271STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It features an integrated bootstrap diode, minimizing external component count and simplifying circuit design. The driver is designed to provide efficient and reliable switching for medium- to high-power applications.
Key features include:
1. Voltage Rating: Capable of driving MOSFETs/IGBTs with up to 600V.
2. Output Current: Can deliver up to 2A sourcing and 3A sinking currents.
3. Bootstrap Circuitry: Integrated diode reduces the need for additional components.
4. Protection Features: Includes under-voltage lockout (UVLO) for both high-side and low-side drivers to protect against inadequate gate drive voltages.
5. Low Propagation Delay: Ensures fast switching with minimal delay, which is crucial for efficient operation.
6. Compatibility: Suitable for half-bridge and full-bridge configurations in various applications, including motor drives and power converters.
7. Temperature Range: Operates effectively across a wide temperature range, enhancing reliability in different environments.
Overall, the IR21271STRPBF is a versatile and robust solution for driving high-voltage transistors in demanding applications.
Key features include:
1. Voltage Rating: Capable of driving MOSFETs/IGBTs with up to 600V.
2. Output Current: Can deliver up to 2A sourcing and 3A sinking currents.
3. Bootstrap Circuitry: Integrated diode reduces the need for additional components.
4. Protection Features: Includes under-voltage lockout (UVLO) for both high-side and low-side drivers to protect against inadequate gate drive voltages.
5. Low Propagation Delay: Ensures fast switching with minimal delay, which is crucial for efficient operation.
6. Compatibility: Suitable for half-bridge and full-bridge configurations in various applications, including motor drives and power converters.
7. Temperature Range: Operates effectively across a wide temperature range, enhancing reliability in different environments.
Overall, the IR21271STRPBF is a versatile and robust solution for driving high-voltage transistors in demanding applications.
Pinout
The IR21271STRPBF is a high-speed power MOSFET and IGBT driver. It typically comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pins serve the following functions:
1. VCC: Supply voltage for the driver.
2. IN: Input signal to control the gate of the MOSFET/IGBT.
3. NC (No Connection): Not internally connected, often used for spacing.
4. COM: Common ground connection.
5. VS: High-side floating supply return.
6. VB: High-side floating supply voltage.
7. HO: High-side gate drive output.
8. LO: Low-side gate drive output.
These pins allow the IR21271STRPBF to provide efficient switching control for power devices, making it suitable for use in various applications like motor drives and power supplies.
1. VCC: Supply voltage for the driver.
2. IN: Input signal to control the gate of the MOSFET/IGBT.
3. NC (No Connection): Not internally connected, often used for spacing.
4. COM: Common ground connection.
5. VS: High-side floating supply return.
6. VB: High-side floating supply voltage.
7. HO: High-side gate drive output.
8. LO: Low-side gate drive output.
These pins allow the IR21271STRPBF to provide efficient switching control for power devices, making it suitable for use in various applications like motor drives and power supplies.
Manufacturer
The IR21271STRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing, manufacturing, and supplying a wide range of semiconductor solutions used in various electronic systems. The company is known for its products in the automotive, industrial power control, power management, and digital security markets. Infineon emphasizes innovation, providing efficient and reliable semiconductor solutions to enhance energy efficiency, mobility, and security across different technological applications.
Application
The IR21271STRPBF is a high-speed, high-voltage MOSFET and IGBT driver IC commonly used in applications such as motor drives, power supplies, and industrial automation. It provides efficient switching for high-power transistors, making it suitable for use in motor control systems, uninterruptible power supplies (UPS), photovoltaic inverters, and other power conversion systems. Its ability to handle high voltages and deliver fast switching speeds allows it to improve the efficiency and performance of power electronics systems. Additionally, the IC's robust design makes it suitable for use in demanding industrial environments.
Package
The IR21271STRPBF is an integrated circuit with a surface-mount package type known as SOIC (Small Outline Integrated Circuit). Specifically, it is an SOIC-8 package, which has 8 pins and is commonly used for compact electronic applications.
