IRF1404ZPBF vs IRF1404PBF

This in-depth comparison of the IRF1404ZPBF and IRF1404PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF1404ZPBF

Infineon Technologies

Lifecycle: Active
Stock: 6484 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF1404PBF

Infineon Technologies

Lifecycle: Active
Stock: 2816 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF1404ZPBF	IRF1404PBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	40 V
Current - Continuous Drain(Id) @ 25°C	180A (Tc)	202A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	3.7mOhm @ 75A, 10V	4mOhm @ 121A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	150 nC @ 10 V	196 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	4340 pF @ 25 V	5669 pF @ 25 V
Power Dissipation (Max)	200W (Tc)	333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

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