IRF1407PBF vs IRF1404ZPBF

This in-depth comparison of the IRF1407PBF and IRF1404ZPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF1407PBF

Infineon Technologies

Lifecycle
Active
Stock
3570 PCS
Package
TO-220-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRF1404ZPBF

Infineon Technologies

Lifecycle
Active
Stock
6484 PCS
Package
TO-220
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF1407PBF IRF1404ZPBF
Series HEXFET® HEXFET®
Part Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 40 V
Current - Continuous Drain(Id) @ 25°C 130A (Tc) 180A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 7.8mOhm @ 78A, 10V 3.7mOhm @ 75A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 250 nC @ 10 V 150 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 5600 pF @ 25 V 4340 pF @ 25 V
Power Dissipation (Max) 330W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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