IRF1404PBF vs IRF1407PBF
This in-depth comparison of the IRF1407PBF and IRF1404PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-220-3
TO-220
Description
MOSFET N-CH 75V 130A TO220AB
MOSFET N-CH 40V 202A TO220AB
Series
HEXFET®
HEXFET®
ProductStatus
Not For New Designs
Active
FETType
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)
75 V
40 V
Current-ContinuousDrain(Id)@25°C
130A (Tc)
202A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
10V
10V
RdsOn(Max)@IdVgs
7.8mOhm @ 78A, 10V
4mOhm @ 121A, 10V
Vgs(th)(Max)@Id
4V @ 250µA
4V @ 250µA
GateCharge(Qg)(Max)@Vgs
250 nC @ 10 V
196 nC @ 10 V
Vgs(Max)
±20V
±20V
InputCapacitance(Ciss)(Max)@Vds
5600 pF @ 25 V
5669 pF @ 25 V
PowerDissipation(Max)
330W (Tc)
333W (Tc)
OperatingTemperature
-55°C ~ 175°C (TJ)
-55°C ~ 175°C (TJ)
MountingType
Through Hole
Through Hole
