IRF4905STRRPBF vs IRF4905PBF

This in-depth comparison of the IRF4905STRRPBF and IRF4905PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF4905STRRPBF

Infineon Technologies

Lifecycle: Active
Stock: 6200 PCS
Package: TO-263-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF4905PBF

Infineon Technologies

Lifecycle: Active
Stock: 6562 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF4905STRRPBF	IRF4905PBF
Series	HEXFET®	HEXFET®
Part Status	Not For New Designs	Active
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V	55 V
Current - Continuous Drain(Id) @ 25°C	42A (Tc)	74A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	20mOhm @ 42A, 10V	20mOhm @ 38A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	180 nC @ 10 V	180 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	3500 pF @ 25 V	3400 pF @ 25 V
Power Dissipation (Max)	170W (Tc)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Through Hole

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