IRF540NSTRLPBF vs IRF540
This in-depth comparison of the IRF540 and IRF540NSTRLPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-263-3
Description
MOSFET N-CH 100V 28A TO220AB
MOSFET N-CH 100V 33A D2PAK
Part Status
Obsolete
-
Base Product Number
IRF540
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
-
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
10V
-
Rds On (Max) @ Id, Vgs
77mOhm @ 17A, 10V
-
Vgs(th) (Max) @ Id
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 25 V
-
Power Dissipation (Max)
150W (Tc)
-
Operating Temperature
-55°C ~ 175°C (TJ)
-
Mounting Type
Through Hole
-
Packaging
Tube
-
Series
-
HEXFET®
ProductStatus
-
Active
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
100 V
Current-ContinuousDrain(Id)@25°C
-
33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
-
10V
RdsOn(Max)@IdVgs
-
44mOhm @ 16A, 10V
Vgs(th)(Max)@Id
-
4V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
71 nC @ 10 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
1960 pF @ 25 V
PowerDissipation(Max)
-
130W (Tc)
OperatingTemperature
-
-55°C ~ 175°C (TJ)
MountingType
-
Surface Mount
