IRF5803TRPBF vs IRF5810 Comparison
This in-depth comparison of the IRF5803TRPBF and IRF5810 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TSOT-23-6
Description
MOSFET P-CH 40V 3.4A MICRO6
MOSFET 2P-CH 20V 2.9A 6TSOP
Supplier
-
Infineon Technologies
Series
HEXFET®
HEXFET®
Part Status
Obsolete
Obsolete
FET Type
P-Channel
2 P-Channel (Dual)
FET Feature
-
Logic Level Gate
Drain to Source Voltage (Vdss)
40 V
20V
Current - Continuous Drain(Id) @ 25°C
-
2.9A
Rds On(Max) @ Id Vgs
-
90mOhm @ 2.9A, 4.5V
Vgs(th)(Max) @ Id
-
1.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
9.6nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds
-
650pF @ 16V
Power - Max
-
960mW
Mounting Type
Surface Mount
Surface Mount
Base Product Number
IRF5803
-
Technology
MOSFET (Metal Oxide)
-
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
112mOhm @ 3.4A, 10V
-
Vgs(th) (Max) @ Id
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
1110 pF @ 25 V
-
Power Dissipation (Max)
2W (Ta)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
