IRF5803TRPBF vs IRF5810TRPBF

This in-depth comparison of the IRF5803TRPBF and IRF5810TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF5803TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 4720 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Part B

IRF5810TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 6356 PCS
Package: TSOT-23-6
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF5803TRPBF	IRF5810TRPBF
Supplier	-	Infineon Technologies
Series	HEXFET®	HEXFET®
Part Status	Obsolete	Obsolete
FET Type	P-Channel	2 P-Channel (Dual)
FET Feature	-	Logic Level Gate
Drain to Source Voltage (Vdss)	40 V	20V
Current - Continuous Drain(Id) @ 25°C	-	2.9A
Rds On(Max) @ Id Vgs	-	90mOhm @ 2.9A, 4.5V
Vgs(th)(Max) @ Id	-	1.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	9.6nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds	-	650pF @ 16V
Power - Max	-	960mW
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Base Product Number	IRF5803	-
Technology	MOSFET (Metal Oxide)	-
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta)	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	-
Rds On (Max) @ Id, Vgs	112mOhm @ 3.4A, 10V	-
Vgs(th) (Max) @ Id	3V @ 250µA	-
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V	-
Vgs (Max)	±20V	-
Input Capacitance (Ciss) (Max) @ Vds	1110 pF @ 25 V	-
Power Dissipation (Max)	2W (Ta)	-
Packaging	Cut Tape (CT), Tape & Reel (TR)	-

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