IRF7104TRPBF vs IRF7101TRPBF

This in-depth comparison of the IRF7104TRPBF and IRF7101TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRF7104TRPBF

Infineon Technologies

Lifecycle
Active
Stock
22804 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

IRF7101TRPBF

Infineon Technologies

Lifecycle
Active
Stock
4760 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7104TRPBF IRF7101TRPBF
Supplier Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET®
Part Status Active Obsolete
FET Type 2 P-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain(Id) @ 25°C 2.3A 3.5A
Rds On(Max) @ Id Vgs 250mOhm @ 1A, 10V 100mOhm @ 1.8A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 25nC @ 10V 15nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 290pF @ 15V 320pF @ 15V
Power - Max 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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