IRF7104TRPBF vs IRF7105PBF

This in-depth comparison of the IRF7104TRPBF and IRF7105PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRF7104TRPBF

Infineon Technologies

Lifecycle
Active
Stock
22804 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

IRF7105PBF

Infineon Technologies

Lifecycle
Active
Stock
7430 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7104TRPBF IRF7105PBF
Supplier Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET®
Part Status Active Discontinued at Digi-Key
FET Type 2 P-Channel (Dual) N and P-Channel
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 20V 25V
Current - Continuous Drain(Id) @ 25°C 2.3A 3.5A, 2.3A
Rds On(Max) @ Id Vgs 250mOhm @ 1A, 10V 100mOhm @ 1A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 25nC @ 10V 27nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 290pF @ 15V 330pF @ 15V
Power - Max 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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