IRF7307TRPBF vs IRF7307PBF

This in-depth comparison of the IRF7307TRPBF and IRF7307PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7307TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 3667 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Part B

IRF7307PBF

Infineon Technologies

Lifecycle: Active
Stock: 5509 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7307TRPBF	IRF7307PBF
Supplier	-	Infineon Technologies
Series	HEXFET®	HEXFET®
Part Status	Last Time Buy	Discontinued at Digi-Key
FET Type	N and P-Channel	N and P-Channel
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	20V	20V
Current - Continuous Drain(Id) @ 25°C	5.2A, 4.3A	5.2A, 4.3A
Rds On(Max) @ Id Vgs	50mOhm @ 2.6A, 4.5V	50mOhm @ 2.6A, 4.5V
Vgs(th)(Max) @ Id	700mV @ 250µA	700mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs	20nC @ 4.5V	20nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds	660pF @ 15V	660pF @ 15V
Power - Max	2W	2W
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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