IRF7307TRPBF vs IRF7309PBF

This in-depth comparison of the IRF7307TRPBF and IRF7309PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7307TRPBF

Infineon Technologies

Lifecycle
Active
Stock
3667 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

IRF7309PBF

Infineon Technologies

Lifecycle
Active
Stock
6881 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7307TRPBF IRF7309PBF
Supplier - Infineon Technologies,Rochester Electronics, LLC
Series HEXFET® HEXFET®
Part Status Last Time Buy Discontinued at Digi-Key
FET Type N and P-Channel N and P-Channel
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 20V 30V
Current - Continuous Drain(Id) @ 25°C 5.2A, 4.3A 4A, 3A
Rds On(Max) @ Id Vgs 50mOhm @ 2.6A, 4.5V 50mOhm @ 2.4A, 10V
Vgs(th)(Max) @ Id 700mV @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 20nC @ 4.5V 25nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 660pF @ 15V 520pF @ 15V
Power - Max 2W 1.4W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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