IRF7309TRPBF vs IRF7307QTRPBF

This in-depth comparison of the IRF7309TRPBF and IRF7307QTRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRF7309TRPBF

Infineon Technologies

Lifecycle
Active
Stock
5390 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

IRF7307QTRPBF

Infineon Technologies

Lifecycle
Active
Stock
4136 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7309TRPBF IRF7307QTRPBF
Supplier - Infineon Technologies
Part Status Active Obsolete
FET Type N and P-Channel N and P-Channel
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 30V 20V
Current - Continuous Drain(Id) @ 25°C 4A, 3A 5.2A, 4.3A
Rds On(Max) @ Id Vgs 50mOhm @ 2.4A, 10V 50mOhm @ 2.6A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA 700mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs 25nC @ 4.5V 20nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 520pF @ 15V 660pF @ 15V
Power - Max 1.4W 2W
Mounting Type Surface Mount Surface Mount
Series HEXFET® -
Operating Temperature -55°C ~ 150°C (TJ) -
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