IRF7317TRPBF vs IRF7335D1TR

This in-depth comparison of the IRF7317TRPBF and IRF7335D1TR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7317TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 2170 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Arrays

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Part B

IRF7335D1TR

Infineon Technologies

Lifecycle: Active
Stock: 5954 PCS
Package: SOIC-14
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7317TRPBF	IRF7335D1TR
Supplier	-	Infineon Technologies
Series	HEXFET®	FETKY™
Part Status	Active	Obsolete
FET Type	N and P-Channel	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	20V	30V
Current - Continuous Drain(Id) @ 25°C	6.6A, 5.3A	10A
Rds On(Max) @ Id Vgs	29mOhm @ 6A, 4.5V	17.5mOhm @ 10A, 4.5V
Vgs(th)(Max) @ Id	700mV @ 250µA	1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	27nC @ 4.5V	20nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds	900pF @ 15V	1500pF @ 15V
Power - Max	2W	2W
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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