IRF7342TRPBF vs IRF7343PBF

This in-depth comparison of the IRF7342TRPBF and IRF7343PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRF7342TRPBF

Infineon Technologies

Lifecycle
Active
Stock
2396 PCS
Package
SOP-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

IRF7343PBF

Infineon Technologies

Lifecycle
Active
Stock
2688 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7342TRPBF IRF7343PBF
Supplier - Infineon Technologies
Series HEXFET® HEXFET®
Part Status Active Obsolete
FET Type 2 P-Channel (Dual) N and P-Channel
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 55V 55V
Current - Continuous Drain(Id) @ 25°C 3.4A 4.7A, 3.4A
Rds On(Max) @ Id Vgs 105mOhm @ 3.4A, 10V 50mOhm @ 4.7A, 10V
Vgs(th)(Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 38nC @ 10V 36nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 690pF @ 25V 740pF @ 25V
Power - Max 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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