IRF7342TRPBF

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IRF7342TRPBF

+BOM

MOSFET 2P-CH 55V 3.4A 8-SOIC

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType 2 P-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 55V
Current-ContinuousDrain(Id)@25°C 3.4A
RdsOn(Max)@IdVgs 105mOhm @ 3.4A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 38nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 690pF @ 25V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Overview

Description

The IRF7342TRPBF is a dual N-channel and P-channel MOSFET in a compact SO-8 package, designed for high-efficiency power switching applications.
Key Features:
- Voltage Ratings: 55V (N-channel) / -55V (P-channel).
- Current Ratings: 4.3A (N-channel) / -3.5A (P-channel).
- Low On-Resistance: 85mΩ (N-channel) / 140mΩ (P-channel).
- Fast Switching: Optimized for high-speed operation.
- Applications: DC-DC converters, motor control, power management.
This MOSFET pair is ideal for synchronous buck converters and other circuits requiring complementary switching. Its small footprint and efficient performance make it suitable for space-constrained designs.

Application

The IRF7342TRPBF, a dual N- and P-channel MOSFET, is commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – H-bridge circuits for driving small motors.
3. Load Switching – Efficient power switching in portable devices.
4. Battery Protection – Reverse polarity and overcurrent protection.
5. Automotive Systems – LED drivers and power distribution.
Its compact SO-8 package and low on-resistance make it suitable for space-constrained, high-efficiency applications.

Package

The IRF7342TRPBF is a dual N- and P-channel MOSFET in a SOIC-8 package. This surface-mount package is compact, suitable for high-density PCB designs, and features eight leads. It is commonly used in power management applications.

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