IRF7380PBF vs IRF7379QTRPBF

This in-depth comparison of the IRF7380PBF and IRF7379QTRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7380PBF

Infineon Technologies

Lifecycle: Active
Stock: 3152 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Part B

IRF7379QTRPBF

Infineon Technologies

Lifecycle: Active
Stock: 8064 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7380PBF	IRF7379QTRPBF
Supplier	Infineon Technologies,Rochester Electronics, LLC	Infineon Technologies
Part Status	Discontinued at Digi-Key	Obsolete
FET Type	2 N-Channel (Dual)	N and P-Channel
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	80V	30V
Current - Continuous Drain(Id) @ 25°C	3.6A	5.8A, 4.3A
Rds On(Max) @ Id Vgs	73mOhm @ 2.2A, 10V	45mOhm @ 5.8A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA	1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	23nC @ 10V	25nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds	660pF @ 25V	520pF @ 25V
Power - Max	2W	2.5W
Mounting Type	Surface Mount	Surface Mount
Series	HEXFET®	-
Operating Temperature	-55°C ~ 150°C (TJ)	-

Compare RFQ