IRF7410TRPBF vs IRF7404TRPBF

This in-depth comparison of the IRF7410TRPBF and IRF7404TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRF7410TRPBF

Infineon Technologies

Lifecycle
Active
Stock
2629 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRF7404TRPBF

International Rectifier

Lifecycle
Active
Stock
3229 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7410TRPBF IRF7404TRPBF
Series HEXFET® HEXFET®
Part Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V
Current - Continuous Drain(Id) @ 25°C 16A (Ta) 6.7A (Ta)
Drive Voltage(Max Rds On Min Rds On) 1.8V, 4.5V 2.7V, 4.5V
Rds On(Max) @ Id Vgs 7mOhm @ 16A, 4.5V 40mOhm @ 3.2A, 4.5V
Vgs(th)(Max) @ Id 900mV @ 250µA 700mV @ 250µA (Min)
Gate Charge(Qg)(Max) @ Vgs 91 nC @ 4.5 V 50 nC @ 4.5 V
Vgs(Max) ±8V ±12V
Input Capacitance(Ciss)(Max) @ Vds 8676 pF @ 10 V 1500 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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