IRF7473TRPBF vs IRF7410TRPBF

This in-depth comparison of the IRF7473TRPBF and IRF7410TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7473TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 3489 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF7410TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 2629 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7473TRPBF	IRF7410TRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	12 V
Current - Continuous Drain(Id) @ 25°C	6.9A (Ta)	16A (Ta)
Drive Voltage(Max Rds On Min Rds On)	10V	1.8V, 4.5V
Rds On(Max) @ Id Vgs	26mOhm @ 4.1A, 10V	7mOhm @ 16A, 4.5V
Vgs(th)(Max) @ Id	5.5V @ 250µA	900mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs	61 nC @ 10 V	91 nC @ 4.5 V
Vgs(Max)	±20V	±8V
Input Capacitance(Ciss)(Max) @ Vds	3180 pF @ 25 V	8676 pF @ 10 V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

Compare RFQ