IRF7478TRPBF vs IRF7404TRPBF

This in-depth comparison of the IRF7478TRPBF and IRF7404TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7478TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 4717 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF7404TRPBF

International Rectifier

Lifecycle: Active
Stock: 3229 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7478TRPBF	IRF7404TRPBF
Series	HEXFET®	HEXFET®
Part Status	Obsolete	Active
FET Type	N-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	20 V
Current - Continuous Drain(Id) @ 25°C	7A (Ta)	6.7A (Ta)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	2.7V, 4.5V
Rds On(Max) @ Id Vgs	26mOhm @ 4.2A, 10V	40mOhm @ 3.2A, 4.5V
Vgs(th)(Max) @ Id	3V @ 250µA	700mV @ 250µA (Min)
Gate Charge(Qg)(Max) @ Vgs	31 nC @ 4.5 V	50 nC @ 4.5 V
Vgs(Max)	±20V	±12V
Input Capacitance(Ciss)(Max) @ Vds	1740 pF @ 25 V	1500 pF @ 15 V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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