IRF7404TRPBF vs IRF7478TRPBF Comparison
This in-depth comparison of the IRF7478TRPBF and IRF7404TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC-8
SOIC-8
Description
MOSFET N-CH 60V 7A 8SO
MOSFET P-CH 20V 6.7A 8SO
Series
HEXFET®
HEXFET®
Part Status
Obsolete
Active
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
20 V
Current - Continuous Drain(Id) @ 25°C
7A (Ta)
6.7A (Ta)
Drive Voltage(Max Rds On Min Rds On)
4.5V, 10V
2.7V, 4.5V
Rds On(Max) @ Id Vgs
26mOhm @ 4.2A, 10V
40mOhm @ 3.2A, 4.5V
Vgs(th)(Max) @ Id
3V @ 250µA
700mV @ 250µA (Min)
Gate Charge(Qg)(Max) @ Vgs
31 nC @ 4.5 V
50 nC @ 4.5 V
Vgs(Max)
±20V
±12V
Input Capacitance(Ciss)(Max) @ Vds
1740 pF @ 25 V
1500 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
