IRF7406TRPBF vs IRF7473TRPBF

This in-depth comparison of the IRF7406TRPBF and IRF7473TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7406TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 1538 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF7473TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 3489 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7406TRPBF	IRF7473TRPBF
Series	HEXFET®	HEXFET®
Part Status	Last Time Buy	Active
FET Type	P-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	100 V
Current - Continuous Drain(Id) @ 25°C	5.8A (Ta)	6.9A (Ta)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	10V
Rds On(Max) @ Id Vgs	45mOhm @ 2.8A, 10V	26mOhm @ 4.1A, 10V
Vgs(th)(Max) @ Id	1V @ 250µA	5.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	59 nC @ 10 V	61 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	1100 pF @ 25 V	3180 pF @ 25 V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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