IRF7493TRPBF vs IRF7425TRPBF

This in-depth comparison of the IRF7493TRPBF and IRF7425TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7493TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 6264 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF7425TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 4696 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7493TRPBF	IRF7425TRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V	20 V
Current - Continuous Drain(Id) @ 25°C	9.3A (Tc)	15A (Ta)
Drive Voltage(Max Rds On Min Rds On)	10V	2.5V, 4.5V
Rds On(Max) @ Id Vgs	15mOhm @ 5.6A, 10V	8.2mOhm @ 15A, 4.5V
Vgs(th)(Max) @ Id	4V @ 250µA	1.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	53 nC @ 10 V	130 nC @ 4.5 V
Vgs(Max)	±20V	±12V
Input Capacitance(Ciss)(Max) @ Vds	1510 pF @ 25 V	7980 pF @ 15 V
Power Dissipation (Max)	2.5W (Tc)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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