IRF7853TRPBF vs IRF7855TRPBF

This in-depth comparison of the IRF7853TRPBF and IRF7855TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7853TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 4594 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Part B

IRF7855TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 5923 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7853TRPBF	IRF7855TRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	60 V
Current - Continuous Drain(Id) @ 25°C	-	12A (Ta)
Drive Voltage(Max Rds On Min Rds On)	-	10V
Rds On(Max) @ Id Vgs	-	9.4mOhm @ 12A, 10V
Vgs(th)(Max) @ Id	-	4.9V @ 100µA
Gate Charge(Qg)(Max) @ Vgs	-	39 nC @ 10 V
Vgs(Max)	-	±20V
Input Capacitance(Ciss)(Max) @ Vds	-	1560 pF @ 25 V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Base Product Number	IRF7853	-
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta)	-
Drive Voltage (Max Rds On, Min Rds On)	10V	-
Rds On (Max) @ Id, Vgs	18mOhm @ 8.3A, 10V	-
Vgs(th) (Max) @ Id	4.9V @ 100µA	-
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V	-
Vgs (Max)	±20V	-
Input Capacitance (Ciss) (Max) @ Vds	1640 pF @ 25 V	-
Packaging	Cut Tape (CT), Tape & Reel (TR)	-

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