IRF7853TRPBF vs IRF7854TRPBF

This in-depth comparison of the IRF7853TRPBF and IRF7854TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7853TRPBF

Infineon Technologies

Lifecycle
Active
Stock
4594 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Part B

IRF7854TRPBF

Infineon Technologies

Lifecycle
Active
Stock
6096 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7853TRPBF IRF7854TRPBF
Series HEXFET® HEXFET®
Part Status Active Active
Base Product Number IRF7853 IRF7854
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 80 V
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 8.3A, 10V 13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 25 V 1620 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) Cut Tape (CT), Tape & Reel (TR)