IRF9393TRPBF vs IRF9317TRPBF

This in-depth comparison of the IRF9393TRPBF and IRF9317TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF9393TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 4060 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF9317TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 3531 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF9393TRPBF	IRF9317TRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V
Current - Continuous Drain(Id) @ 25°C	9.2A (Ta)	16A (Ta)
Drive Voltage(Max Rds On Min Rds On)	10V, 20V	4.5V, 10V
Rds On(Max) @ Id Vgs	13.3mOhm @ 9.2A, 20V	6.6mOhm @ 16A, 10V
Vgs(th)(Max) @ Id	2.4V @ 25µA	2.4V @ 50µA
Gate Charge(Qg)(Max) @ Vgs	38 nC @ 10 V	92 nC @ 10 V
Vgs(Max)	±25V	±20V
Input Capacitance(Ciss)(Max) @ Vds	1110 pF @ 25 V	2820 pF @ 15 V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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