IRF9393TRPBF vs IRF9358PBF Comparison
This in-depth comparison of the IRF9393TRPBF and IRF9358PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC-8
Description
MOSFET P-CH 30V 9.2A 8SO
MOSFET 2P-CH 30V 9.2A 8SO
Series
HEXFET®
HEXFET®
Part Status
Active
Discontinued at Digi-Key
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Configuration
-
2 P-Channel (Dual)
FET Feature
-
Logic Level Gate
Drain to Source Voltage (Vdss)
30 V
30V
Current - Continuous Drain (Id) @ 25°C
-
9.2A
Rds On (Max) @ Id, Vgs
-
16.3mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id
-
2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
-
38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
1740pF @ 25V
Power - Max
-
2W
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Base Product Number
-
IRF9358
FET Type
P-Channel
-
Current - Continuous Drain(Id) @ 25°C
9.2A (Ta)
-
Drive Voltage(Max Rds On Min Rds On)
10V, 20V
-
Rds On(Max) @ Id Vgs
13.3mOhm @ 9.2A, 20V
-
Vgs(th)(Max) @ Id
2.4V @ 25µA
-
Gate Charge(Qg)(Max) @ Vgs
38 nC @ 10 V
-
Vgs(Max)
±25V
-
Input Capacitance(Ciss)(Max) @ Vds
1110 pF @ 25 V
-
Power Dissipation (Max)
2.5W (Ta)
-
