IRF9393TRPBF vs IRF9358PBF

This in-depth comparison of the IRF9393TRPBF and IRF9358PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRF9393TRPBF

Infineon Technologies

Lifecycle
Active
Stock
4060 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRF9358PBF

Infineon Technologies

Lifecycle
Active
Stock
9483 PCS
Series
Transistors - FETs, MOSFETs - FET, MOSFET Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF9393TRPBF IRF9358PBF
Series HEXFET® HEXFET®
Part Status Active Discontinued at Digi-Key
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration - 2 P-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) 30 V 30V
Current - Continuous Drain (Id) @ 25°C - 9.2A
Rds On (Max) @ Id, Vgs - 16.3mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id - 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs - 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds - 1740pF @ 25V
Power - Max - 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - IRF9358
FET Type P-Channel -
Current - Continuous Drain(Id) @ 25°C 9.2A (Ta) -
Drive Voltage(Max Rds On Min Rds On) 10V, 20V -
Rds On(Max) @ Id Vgs 13.3mOhm @ 9.2A, 20V -
Vgs(th)(Max) @ Id 2.4V @ 25µA -
Gate Charge(Qg)(Max) @ Vgs 38 nC @ 10 V -
Vgs(Max) ±25V -
Input Capacitance(Ciss)(Max) @ Vds 1110 pF @ 25 V -
Power Dissipation (Max) 2.5W (Ta) -
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