IRFB3207PBF vs IRFB38N20DPBF

This in-depth comparison of the IRFB3207PBF and IRFB38N20DPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB3207PBF

Infineon Technologies

Lifecycle: Active
Stock: 2526 PCS
Package: TO-220-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRFB38N20DPBF

Infineon Technologies

Lifecycle: Active
Stock: 6086 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFB3207PBF	IRFB38N20DPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V	200 V
Current - Continuous Drain(Id) @ 25°C	170A (Tc)	43A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	4.5mOhm @ 75A, 10V	54mOhm @ 26A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA	5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	260 nC @ 10 V	91 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	7600 pF @ 50 V	2900 pF @ 25 V
Power Dissipation (Max)	330W (Tc)	3.8W (Ta), 300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

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