IRFB3077PBF vs IRFB3207PBF

This in-depth comparison of the IRFB3207PBF and IRFB3077PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB3207PBF

+BOM

2526 PCS | Infineon Technologies
IRFB3077PBF

+BOM

4658 PCS | International Rectifier
Package TO-220-3 TO-220
Description MOSFET N-CH 75V 170A TO220AB IRFB3077 - 12V-300V N-CHANNEL PO
Series HEXFET® HEXFET®
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V 75 V
Current-ContinuousDrain(Id)@25°C 170A (Tc) 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 4.5mOhm @ 75A, 10V 3.3mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 260 nC @ 10 V 220 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 7600 pF @ 50 V 9400 pF @ 50 V
PowerDissipation(Max) 330W (Tc) 370W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IRFB3207PBF IRFB3077PBF

+BOM RFQ