IRFB3207PBF vs IRFB3077PBF

This in-depth comparison of the IRFB3207PBF and IRFB3077PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB3207PBF

Infineon Technologies

Lifecycle
Active
Stock
2526 PCS
Package
TO-220-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRFB3077PBF

International Rectifier

Lifecycle
Active
Stock
4658 PCS
Package
TO-220
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB3207PBF IRFB3077PBF
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain(Id) @ 25°C 170A (Tc) 120A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 4.5mOhm @ 75A, 10V 3.3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 260 nC @ 10 V 220 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 7600 pF @ 50 V 9400 pF @ 50 V
Power Dissipation (Max) 330W (Tc) 370W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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