IRFB4227PBF vs IRFB4710PBF

This in-depth comparison of the IRFB4227PBF and IRFB4710PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB4227PBF

Infineon Technologies

Lifecycle: Active
Stock: 3207 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRFB4710PBF

Infineon Technologies

Lifecycle: Active
Stock: 2708 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFB4227PBF	IRFB4710PBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	100 V
Current - Continuous Drain(Id) @ 25°C	65A (Tc)	75A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	24mOhm @ 46A, 10V	14mOhm @ 45A, 10V
Vgs(th)(Max) @ Id	5V @ 250µA	5.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	98 nC @ 10 V	170 nC @ 10 V
Vgs(Max)	±30V	±20V
Input Capacitance(Ciss)(Max) @ Vds	4600 pF @ 25 V	6160 pF @ 25 V
Power Dissipation (Max)	330W (Tc)	3.8W (Ta), 200W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

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