IRFB7434PBF vs IRFB7430PBF Comparison

This in-depth comparison of the IRFB7430PBF and IRFB7434PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB7430PBF

+BOM

5760 PCS | Infineon Technologies
IRFB7434PBF

+BOM

7189 PCS | Infineon Technologies
Package TO-220 TO-220-3
Description MOSFET N CH 40V 195A TO220 MOSFET N-CH 40V 195A TO220AB
Series HEXFET®, StrongIRFET™ HEXFET®, StrongIRFET™
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain(Id) @ 25°C 195A (Tc) 195A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V 6V, 10V
Rds On(Max) @ Id Vgs 1.3mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V
Vgs(th)(Max) @ Id 3.9V @ 250µA 3.9V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 460 nC @ 10 V 324 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 14240 pF @ 25 V 10820 pF @ 25 V
Power Dissipation (Max) 375W (Tc) 294W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Comparison Model : IRFB7430PBF IRFB7434PBF

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