IRFHM830TRPBF vs IRFHM792TR2PBF
This in-depth comparison of the IRFHM830TRPBF and IRFHM792TR2PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
VDFN-8
Description
MOSFET N-CH 30V 21A/40A PQFN
MOSFET 2N-CH 100V 2.3A 8PQFN
Supplier
-
Infineon Technologies
ProductStatus
-
Obsolete
FETType
-
2 N-Channel (Dual)
FETFeature
-
Standard
DraintoSourceVoltage(Vdss)
-
100V
Current-ContinuousDrain(Id)@25°C
-
2.3A
RdsOn(Max)@IdVgs
-
195mOhm @ 2.9A, 10V
Vgs(th)(Max)@Id
-
4V @ 10µA
GateCharge(Qg)(Max)@Vgs
-
6.3nC @ 10V
InputCapacitance(Ciss)(Max)@Vds
-
251pF @ 25V
Power-Max
-
2.3W
MountingType
-
Surface Mount
Series
HEXFET®
-
Part Status
Obsolete
-
Base Product Number
IRFHM830
-
Technology
MOSFET (Metal Oxide)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
3.8mOhm @ 20A, 10V
-
Vgs (Max)
±20V
-
Power Dissipation (Max)
2.7W (Ta), 37W (Tc)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
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