IRFHM830TRPBF vs IRFHM8363TR2PBF Comparison
This in-depth comparison of the IRFHM830TRPBF and IRFHM8363TR2PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
VDFN-8
Description
MOSFET N-CH 30V 21A/40A PQFN
MOSFET 2N-CH 30V 11A 8PQFN
Supplier
-
Infineon Technologies
Part Status
Obsolete
Obsolete
FET Type
N-Channel
2 N-Channel (Dual)
FET Feature
-
Logic Level Gate
Drain to Source Voltage (Vdss)
30 V
30V
Current - Continuous Drain(Id) @ 25°C
-
11A
Rds On(Max) @ Id Vgs
-
14.9mOhm @ 10A, 10V
Vgs(th)(Max) @ Id
-
2.35V @ 25µA
Gate Charge(Qg)(Max) @ Vgs
-
15nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds
-
1165pF @ 10V
Power - Max
-
2.7W
Mounting Type
Surface Mount
Surface Mount
Series
HEXFET®
-
Base Product Number
IRFHM830
-
Technology
MOSFET (Metal Oxide)
-
Current - Continuous Drain (Id) @ 25°C
21A (Ta), 40A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
3.8mOhm @ 20A, 10V
-
Vgs(th) (Max) @ Id
2.35V @ 50µA
-
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
2155 pF @ 25 V
-
Power Dissipation (Max)
2.7W (Ta), 37W (Tc)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
