IRFP250PBF vs IRFP2907PBF

This in-depth comparison of the IRFP250PBF and IRFP2907PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFP250PBF

Vishay Siliconix

Lifecycle
Active
Stock
1442 PCS
Package
TO-247-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRFP2907PBF

Infineon Technologies

Lifecycle
Active
Stock
3634 PCS
Package
TO-247
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFP250PBF IRFP2907PBF
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 75 V
Current - Continuous Drain(Id) @ 25°C 30A (Tc) 209A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 85mOhm @ 18A, 10V 4.5mOhm @ 125A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 140 nC @ 10 V 620 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 2800 pF @ 25 V 13000 pF @ 25 V
Power Dissipation (Max) 190W (Tc) 470W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Series - HEXFET®
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