IRFP3306PBF vs IRFP32N50KPBF

This in-depth comparison of the IRFP3306PBF and IRFP32N50KPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFP3306PBF

Infineon Technologies

Lifecycle: Active
Stock: 4449 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Part B

IRFP32N50KPBF

Vishay Siliconix

Lifecycle: Active
Stock: 4605 PCS
Package: TO-247-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFP3306PBF	IRFP32N50KPBF
Series	HEXFET®	-
Part Status	Last Time Buy	Active
Base Product Number	IRFP3306	-
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	500 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)	-
Drive Voltage (Max Rds On, Min Rds On)	10V	-
Rds On (Max) @ Id, Vgs	4.2mOhm @ 75A, 10V	-
Vgs(th) (Max) @ Id	4V @ 150µA	-
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V	-
Vgs (Max)	±20V	-
Input Capacitance (Ciss) (Max) @ Vds	4520 pF @ 50 V	-
Power Dissipation (Max)	220W (Tc)	460W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Packaging	Tube	-
Current - Continuous Drain(Id) @ 25°C	-	32A (Tc)
Drive Voltage(Max Rds On Min Rds On)	-	10V
Rds On(Max) @ Id Vgs	-	160mOhm @ 32A, 10V
Vgs(th)(Max) @ Id	-	5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	190 nC @ 10 V
Vgs(Max)	-	±30V
Input Capacitance(Ciss)(Max) @ Vds	-	5280 pF @ 25 V

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