IRFP3206PBF vs IRFP3306PBF
This in-depth comparison of the IRFP3306PBF and IRFP3206PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-247-3
Description
MOSFET N-CH 60V 120A TO247AC
MOSFET N-CH 60V 120A TO247AC
Series
HEXFET®
HEXFET®
Part Status
Last Time Buy
-
Base Product Number
IRFP3306
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
-
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
10V
-
Rds On (Max) @ Id, Vgs
4.2mOhm @ 75A, 10V
-
Vgs(th) (Max) @ Id
4V @ 150µA
-
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
4520 pF @ 50 V
-
Power Dissipation (Max)
220W (Tc)
-
Operating Temperature
-55°C ~ 175°C (TJ)
-
Mounting Type
Through Hole
-
Packaging
Tube
-
ProductStatus
-
Active
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
60 V
Current-ContinuousDrain(Id)@25°C
-
120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
-
10V
RdsOn(Max)@IdVgs
-
3mOhm @ 75A, 10V
Vgs(th)(Max)@Id
-
4V @ 150µA
GateCharge(Qg)(Max)@Vgs
-
170 nC @ 10 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
6540 pF @ 50 V
PowerDissipation(Max)
-
280W (Tc)
OperatingTemperature
-
-55°C ~ 175°C (TJ)
MountingType
-
Through Hole
