IRFP4227PBF vs IRFP450PBF Comparison

This in-depth comparison of the IRFP4227PBF and IRFP450PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFP4227PBF

+BOM

2165 PCS | International Rectifier
IRFP450PBF

+BOM

6703 PCS | Vishay
Package TO-247 TO-247-3
Description IRFP4227 - 12V-300V N-CHANNEL PO NCHAN, TO-247AC, 500V, 14A IRFP4
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 500 V
Current - Continuous Drain(Id) @ 25°C 65A (Tc) 14A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 25mOhm @ 46A, 10V 400mOhm @ 8.4A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 98 nC @ 10 V 150 nC @ 10 V
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 4600 pF @ 25 V 2600 pF @ 25 V
Power Dissipation (Max) 330W (Tc) 190W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Series HEXFET® -
Comparison Model : IRFP4227PBF IRFP450PBF

+BOM RFQ