IRFP4229PBF vs IRFP4332PBF

This in-depth comparison of the IRFP4229PBF and IRFP4332PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFP4229PBF

International Rectifier

Lifecycle: Active
Stock: 2338 PCS
Package: TO-247-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRFP4332PBF

Infineon Technologies

Lifecycle: Active
Stock: 2764 PCS
Package: TO-247
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFP4229PBF	IRFP4332PBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V	250 V
Current - Continuous Drain(Id) @ 25°C	44A (Tc)	57A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	46mOhm @ 26A, 10V	33mOhm @ 35A, 10V
Vgs(th)(Max) @ Id	5V @ 250µA	5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	110 nC @ 10 V	150 nC @ 10 V
Vgs(Max)	±30V	±30V
Input Capacitance(Ciss)(Max) @ Vds	4560 pF @ 25 V	5860 pF @ 25 V
Power Dissipation (Max)	310W (Tc)	360W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

Compare RFQ