IRFP4229PBF vs IRFP450PBF Comparison

This in-depth comparison of the IRFP4229PBF and IRFP450PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFP4229PBF

+BOM

2338 PCS | International Rectifier
IRFP450PBF

+BOM

6703 PCS | Vishay
Package TO-247-3 TO-247-3
Description IRFP4229 - 12V-300V N-CHANNEL PO NCHAN, TO-247AC, 500V, 14A IRFP4
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 500 V
Current - Continuous Drain(Id) @ 25°C 44A (Tc) 14A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 46mOhm @ 26A, 10V 400mOhm @ 8.4A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 110 nC @ 10 V 150 nC @ 10 V
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 4560 pF @ 25 V 2600 pF @ 25 V
Power Dissipation (Max) 310W (Tc) 190W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Series HEXFET® -
Comparison Model : IRFP4229PBF IRFP450PBF

+BOM RFQ