IRFP4310ZPBF
Infineon Technologies
- Lifecycle
- Active
- Stock
- 3590 PCS
- Package
- TO-247-3
- Series
- Transistors - FETs, MOSFETs - Single
This in-depth comparison of the IRFP4310ZPBF and IRFP460APBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.
Infineon Technologies
Vishay Siliconix
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| Specification | IRFP4310ZPBF | IRFP460APBF |
|---|---|---|
| Series | HEXFET® | - |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 10V |
| Rds On(Max) @ Id Vgs | 6mOhm @ 75A, 10V | 270mOhm @ 12A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 150µA | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 170 nC @ 10 V | 105 nC @ 10 V |
| Vgs(Max) | ±20V | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 6860 pF @ 50 V | 3100 pF @ 25 V |
| Power Dissipation (Max) | 280W (Tc) | 280W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |