IRFP4768PBF vs IRFP4229PBF Comparison
This in-depth comparison of the IRFP4768PBF and IRFP4229PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-247-3
Description
MOSFET N-CH 250V 93A TO247AC
IRFP4229 - 12V-300V N-CHANNEL PO
Series
HEXFET®
HEXFET®
Part Status
Last Time Buy
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
250 V
Current - Continuous Drain(Id) @ 25°C
-
44A (Tc)
Drive Voltage(Max Rds On Min Rds On)
-
10V
Rds On(Max) @ Id Vgs
-
46mOhm @ 26A, 10V
Vgs(th)(Max) @ Id
-
5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
110 nC @ 10 V
Vgs(Max)
-
±30V
Input Capacitance(Ciss)(Max) @ Vds
-
4560 pF @ 25 V
Power Dissipation (Max)
520W (Tc)
310W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Through Hole
Base Product Number
IRFP4768
-
Current - Continuous Drain (Id) @ 25°C
93A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
10V
-
Rds On (Max) @ Id, Vgs
17.5mOhm @ 56A, 10V
-
Vgs(th) (Max) @ Id
5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
10880 pF @ 50 V
-
Packaging
Tube
-
